Direct evidence of electromigration failure mechanism in dual-damascene Cu interconnect tree structures

Vairagar, A. V. and Mhaisalkar, S. G. and Meyer, M. A. and Krishnamoorthy, A. and Zschech, E and Gusak, A. M. (2005) Direct evidence of electromigration failure mechanism in dual-damascene Cu interconnect tree structures. Applied physics letters, Т. 87 (№ 1). pp. 1-3.

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Abstract

In situ secondary electron microscope (SEM) characterizations were carried out to study electromigration failure mechanism in dual-damascene Cu interconnect tree structures, which are important for reliability assessment as well as design optimizations of on-chip interconnects. Direct evidence of electromigration-induced degradation in interconnect tree structure consisting of void nucleation and void movement in opposite direction to electron flow along the Cu/SiNx interface was unraveled. The peculiar electromigration behavior of Cu interconnect tree structures can be clearly understood based on this mechanism. Dependence of electromigration mechanism of a segment in a Cu interconnect tree on current configuration in neighboring interconnect segment is discussed in detail.

Item Type: Article
Subjects: Фізико-математичні науки
Divisions: Навчально-науковий інститут інформаційних та освітніх технологій
Depositing User: Наукова Бібліотека
Date Deposited: 16 Apr 2020 18:35
Last Modified: 16 Apr 2020 18:35
URI: http://eprints.cdu.edu.ua/id/eprint/2101

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