Tu, K. N. and Gusak, A. M. and Sobchenko, I. (2003) Linear rate of grain growth in thin films during deposition. Physical review (№ 67). pp. 1-5.
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Abstract
Typical grain growth occurs in a polycrystalline phase under the constraint of constant volume, resulting in reduction of the total surface ~grain boundary! area and energy. The grain growth rate is parabolic. We present here a different kind of grain growth in thin films during deposition, while the film is thickening. The grain growth rate can be linear. In vapor-phase deposition of face-centered-cubic metals such as Al and Cu, the grain size of the film is known to be nearly the same as the film thickness. A linear grain growth rate is expected if the deposition rate is constant. If we assume the grain size to be the same as the thickness, the total surface ~grain boundary! area does not change. Under the constraint of a constant surface area, we present here a simple kinetic model of linear rate of grain growth during film deposition. We define it as flux-driven grain growth. A Monte Carlo simulation has been performed for comparison, and the results show a linear relationship between grain size and film thickness
Item Type: | Article |
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Subjects: | Фізико-математичні науки |
Divisions: | Навчально-науковий інститут інформаційних та освітніх технологій |
Depositing User: | Наукова Бібліотека |
Date Deposited: | 16 Apr 2020 18:55 |
Last Modified: | 16 Apr 2020 18:55 |
URI: | https://eprints.cdu.edu.ua/id/eprint/2121 |
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