In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures

Vairagara, A. V., Krishnamoorthy, A., Tu, K. N., Gusak, A. M., Meyer, M. A. M., Zschech, E., Mhaisalkar, S. G., Zschech, E. (2004) In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures. Applied physics letters, Т. 85 (№ 13). с. 2502-2505.

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Резюме

In situ electromigration experiments were carried out to study electromigration-induced failure in the upper and lower layers in dual-damascene Cu test structures. The observations revealed electromigration-induced void movement along the Cu/dielectric cap interface. It supports the premise that Cu/Si3N4 interface acts as the dominant electromigration path. However, the observed void nucleation occurs in the Cu/Si 3N4 interface at locations which are far from the cathode, and void movement along the Cu/Si3N4 interface in opposite direction of electron flow eventually causes void agglomeration at the via in the cathode end. The different electromigration behaviors of the upper and lower layer dual-damascene structures are discussed.

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