Zaporozhets, T. V., Gusak, A. M. (2011) Role of Finite Vacancy Relaxation Rate at SHS Reactions in Nanosized Multilayers. Defect and Diffusion Forum, Т. 309. с. 215-222.
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Резюме
Rate of SHS (self-propagating high-tеmperature synthesis) reactions in solid nano-sized multilayers is controlled by the time and temperature dependent vacancy concentration. The increase of reaction temperature is typically faster than the rate of vacancy generation. Therefore, the finite relaxation rate of vacancies leads to drastic slowing down of SHS. On the other hand, asprepared vacancy supersaturation due to fast deposition on the cold substrate may lead to a certain acceleration of SHS. Influence of (1) vacancy mean free path and (2) initial vacancy supersaturation on the SHS rate is investigated numerically. In wide region of parameters the front velocity appears to be inversely proportional to the square root of vacancy mean free path length.
| Тип елементу : | Стаття |
|---|---|
| Неконтрольовані ключові слова: | self-propagating high-temperature synthesis (SHS) ; multilayer thin films ; diffusion ; modeling, nonequilibrium vacancy |
| Теми: | Фізико-математичні науки |
| Підрозділи: | Навчально-науковий інститут інформаційних та освітніх технологій |
| Користувач, що депонує: | Наукова Бібліотека |
| Дата внесення: | 16 Квіт 2020 18:31 |
| Останні зміни: | 16 Квіт 2020 18:31 |
| URI: | https://eprints.cdu.edu.ua/id/eprint/2095 |
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